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N TYPE 25W POWER ATTENUATOR
N CONNECTOR,3-30dB,25W AVERAGE POWER
¡ñ unleaded technics, accord with Standard Rohs
¡ñ the Substrate Material uses environmental aluminum nitride ceramics
¡ñ the resistive film adopts the high performance thin film technology
¡ñ use the newest processing technology enhance the pad strength

This device provides high power dissipation capabilities. The appropriate heat sink and improved thin film design technology and laser trimming provide proven RF power capabilities to meet the demands of today's CDMA and WCDMA system requirements.

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Product Specifications:
NO. POWER SUBSTRATE DIMETION FREQENCYRANGE VSWR INTERFAC ATTEN
MANA25NRC 25W ALN 60x60x105mm DC-3GHz <1.2:1 NM-NF 3-30dB
   
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